|Title||Few-layered graphene growth by carbon implantation into polycrystalline nickel substrate|
|Publication Type||Book Chapter|
|Year of Publication||2012|
|Authors||Lee, KKeung, Shiell, T, McCallum, JC, Szymanski, R, Soncini, A, Boskovic, C, Jamieson, DN|
|Book Title||COMMAD 2012|
Carbon ions were implanted into nickel films to facilitate growth of few-layered graphene. After vacuum annealing at 950 °C, G and 2D peaks were seen in micro-Raman measurements of the nickel film. No D peak, which is associated with sp3 adsorbates and vacancies/defects in graphene, was observed.